Back to results
US 2013/0277718 A1Published application
Jfet device and method of manufacturing the same
AssigneeMacronix International Co., Ltd.
InventorsWing Chor Chan, Chih Min Hu, Jeng Gong
Life of this patent
Estimating the term…
Abstract
A disclosed semiconductor device includes a semiconductor deposition layer formed over an insulation structure and above a substrate. The device includes a gate formed over a contact region between first and second implant regions in the semiconductor deposition layer. The first and second implant regions both have a first conductivity type, and the gate has a second conductivity type. The device may further include a second gate formed beneath the semiconductor deposition layer.
Claims21
A semiconductor device comprising:
- a substrate;
- an insulation structure formed over the substrate;
- a semiconductor deposition layer formed over the insulation structure and above the substrate, the semiconductor deposition layer having a first conductivity type;
- a first implant region formed in the semiconductor deposition layer, the first implant region having the first conductivity type and having a heavier doping concentration than the semiconductor deposition layer;
- a second implant region formed in the semiconductor deposition layer, the second implant region having the first conductivity type and having a heavier doping concentration than the semiconductor deposition layer;
- and
- a metal contact layer formed on a contact region of the semiconductor deposition layer between the first and second implant regions, whereby a junction forms between the metal layer and the contact region of the semiconductor deposition layer, wherein the junction is a Schottky barrier.
4 more elements
A semiconductor device comprising:
- a substrate;
- a first insulation structure formed over the substrate;
- a first semiconductor deposition layer formed over the first insulation structure;
- a second insulation structure formed over the first semiconductor deposition layer;
- a second semiconductor deposition layer formed over the second insulation structure, the second semiconductor deposition layer having a conductivity type;
- a first implant region formed in the second semiconductor deposition layer, the first implant region having the conductivity type and having a heavier doping concentration than the second semiconductor deposition layer;
- a second implant region formed in the second semiconductor deposition layer, the second implant region having the conductivity type and having a heavier doping concentration than the second semiconductor deposition layer;
- and
- a metal contact layer formed on a contact region of the second semiconductor deposition layer between the first and second implant regions, whereby a junction forms between the metal contact layer and the contact region of the second semiconductor deposition layer, wherein the junction is a Schottky barrier.
6 more elements
A method of manufacturing a semiconductor device comprising:
- forming an insulation structure formed over a substrate;
- forming a semiconductor deposition layer over the insulation structure and above the substrate, the semiconductor deposition layer having a first conductivity type;
- forming a first implant region in the semiconductor deposition layer, the first implant region having the first conductivity type and having a heavier doping concentration than the semiconductor deposition layer;
- forming a second implant region in the semiconductor deposition layer, the second implant region having the first conductivity type and having a heavier doping concentration than the semiconductor deposition layer;
- forming a metal contact layer on a contact region of the semiconductor deposition layer between the first and second implant regions, whereby a junction forms between the metal contact layer and the contact region of the semiconductor deposition layer, wherein the junction is a Schottky barrier.
2 more elements
A method of manufacturing a semiconductor device comprising:
- forming a first insulation structure over the substrate;
- forming a first semiconductor deposition layer over the first insulation structure;
- forming a second insulation structure over the first semiconductor deposition layer;
- forming a second semiconductor deposition layer over the second insulation structure, the second semiconductor deposition layer having a conductivity type;
- forming a first implant region in the second semiconductor deposition layer, the first implant region having the conductivity type and having a heavier doping concentration than the second semiconductor deposition layer;
- forming a second implant region in the second semiconductor deposition layer, the second implant region having the conductivity type and having a heavier doping concentration than the second semiconductor deposition layer;
- and
- forming a metal contact layer on a contact region of the second semiconductor deposition layer between the first and second implant regions, whereby a junction forms between the metal contact layer and the contact region of the second semiconductor deposition layer, wherein the junction is a Schottky barrier.
5 more elements
Dependencies are inferred from the claim text.