Stacked led device with diagonal bonding pads
AssigneePhostek, Inc.
InventorsYuan-Hsiao Chang, Yi-An Lu
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AssigneePhostek, Inc.
InventorsYuan-Hsiao Chang, Yi-An Lu
Estimating the term…
A semiconductor light emitting device includes a substrate and a first epitaxial structure over the substrate. The first epitaxial structure includes a first doped layer, a first light emitting layer, and a second doped layer. A first electrode is coupled to the first doped layer. A second electrode is coupled to the second doped layer facing the same direction as the first electrode. A second epitaxial structure includes a third doped layer, a second light emitting layer, and a fourth doped layer. A third electrode is coupled to the third doped layer facing the same direction as the first electrode. A fourth electrode is coupled to the fourth doped layer facing the same direction as the first electrode. An adhesive layer is between the first epitaxial structure and the second epitaxial structure.
A semiconductor light emitting device, comprising:
A method for forming a semiconductor light emitting device, comprising:
A light emitting diode array, comprising:
Dependencies are inferred from the claim text.