Semiconductor Structure with Metal Gate and Method of Fabricating the Same
AssigneeUnited Microelectronics Corp.
InventorsAn-Chi Liu, Chun-Hsien Lin
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Abstract
A metal gate process comprises the steps of providing a substrate, forming a dummy gate on said substrate, forming dummy spacers on at least one of the surrounding sidewalls of said dummy gate, forming a source and a drain respectively in said substrate at both sides of said dummy gate, performing a replacement metal gate process to replace said dummy gate with a metal gate, removing said dummy spacers, and forming low-K spacers to replace said dummy spacers.
Claims23
A fin field effect transistor (Fin FET) process, comprising the step of:
- providing a substrate;
- forming at least one fin structures on said substrates;
- forming a dummy gate on part of said fin structure;
- forming dummy spacers on at least one of the surrounding sidewalls of said dummy gate;
- forming a source and a drain respectively in said fin structure at both sides of said dummy gate;
- performing a replacement metal gate process to replace said dummy gate with a metal gate;
- removing said dummy spacers;
- and
- forming low-K spacers to replace said dummy spacers.
A semiconductor structure with metal gate, comprising:
- a substrate;
- a metal gate on said substrate;
- epitaxial structures disposed respectively at both sides of said metal gate;
- and
- low-K spacers disposed respectively in the recesses between said metal gate and said epitaxial structures, and the top surface of said low-K spacers are lower than the top surface of said metal gate.
A fin field effect transistor (Fin FET), comprising:
- a substrate;
- at least one fin structures formed on said substrate;
- a gate formed on said fin structure;
- epitaxial structures formed respectively in said fin structure at both sides of said gate;
- and
- low-K spacers formed respectively in the recesses between said gate and said epitaxial structures and in the recesses surrounding said fin structures, wherein said low-K spacers are leveled with the top surface of said epitaxial structures and lower than the top surface of said gate.
Dependencies are inferred from the claim text.