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US 2013/0277672 A1Published application
Amorphous oxide and field effect transistor
AssigneesTokyo Institute of Technology, Canon Kabushiki Kaisha
InventorsMASAFUMI SANO, KATSUMI NAKAGAWA, HIDEO HOSONO, TOSHIO KAMIYA, KENJI NOMURA
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Abstract
A novel amorphous oxide applicable, for example, to an active layer of a TFT is provided. The amorphous oxide comprises microcrystals.
Claims8
-21. (canceled)
A field effect transistor comprising:
- a gate electrode,
- a gate insulator, and
- an active layer of an amorphous oxide,
- wherein the amorphous oxide has a composition varying in a layer thickness direction and has an electron carrier concentration of 1012/cm3 or more and less than 1018/cm3.
1 more element
A field effect transistor comprising:
- a gate electrode,
- a gate insulator, and
- an active layer of an amorphous oxide,
- wherein the amorphous oxide further contains one element or a plurality of elements selected from the group consisting of Li, Na, Mn, Ni, Pd, Cu, Cd, C, N, P, Ti, Zr, V, Ru, Ge, and F, and
- wherein the amorphous oxide has an electron carrier concentration of 1012/cm3 or more and less than 1018/cm3.
2 more elements
Dependencies are inferred from the claim text.