Field-effect transistor, process for producing the same, and electronic device including the same
AssigneeMitsubishi Chemical Corporation
InventorYosuke OSEKI
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Abstract
The invention relates to a bottom-contact type field-effect transistor which comprises: a substrate; a source electrode 3 and a drain electrode 4 that have been formed over the substrate and are constituted of an inexpensive metal; and an organic semiconductor layer 6 having an annulene structure, wherein an oxide film does not exist on a surface of at least one of the source electrode 3 and the drain electrode 4, which is in contact with the organic semiconductor layer 6, and a process for producing the field-effect transistor and an electronic device.
Claims15
A bottom-contact type field-effect transistor which comprises a substrate;
- a source electrode and a drain electrode that have been formed over the substrate;
- and an organic semiconductor layer having an annulene structure, wherein
- the source electrode and the drain electrode are constituted of a metal which comprises a metal having a standard electrode potential of 1.10 V or less, or an alloy of the metal, and
- an oxide film does not exist on a surface of at least one of the source electrode and the drain electrode, which is in contact with the organic semiconductor layer.
A bottom-contact type field-effect transistor which comprises a substrate;
- a source electrode and a drain electrode that have been formed over the substrate;
- and an organic semiconductor layer having an annulene structure, wherein
- the source electrode and the drain electrode are constituted of a metal which comprises a metal other than Au and Pt, or an alloy of the metal, and
- an oxide film does not exist on a surface of at least one of the source electrode and the drain electrode, which is in contact with the organic semiconductor layer.
A process for producing a bottom-contact type field-effect transistor, which comprises:
- forming a source electrode and a drain electrode that each are constituted of a metal or an alloy, over a substrate;
- and forming an organic semiconductor layer having an annulene structure, wherein
- after the formation of the source electrode and the drain electrode, an oxide film removal treatment is conducted in which an oxide film is removed from a surface of at least one of the electrodes, and the organic semiconductor layer is formed after the treatment.
Dependencies are inferred from the claim text.