Uv led with tunnel-injection layer
AssigneesForschungsverbund e.V., Technische Universitaet Berlin
InventorsMichael KNEISSL, Tim Kolbe
Life of this patent
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Abstract
An ultraviolet (UV) light emitting structure, a UV light emitting device, and a method of making a UV light emitting structure or device, wherein the UV light emitting structure or device has an AlN or AlGaN injection layer with high aluminum content between the light emitting active region and the p-doped layers and wherein the injection layer has a thickness such that holes can tunnel from the p-side of the semiconductor-based ultraviolet light emitting diode structure through the injection layer in the active zone and also reducing leakage electrons out of the active zone.
Claims28
A semiconductor-based ultraviolet light emitting diode structure comprising:
- a light emitting active region;
- one or more p-doped layers;
- an AlN or AlGaN injection layer with high aluminum content between the light emitting active region and the p-doped layer;
- wherein said injection layer has a thickness such that holes can tunnel from the p-side of the semiconductor-based ultraviolet light emitting diode structure through the injection layer in the active zone and also reducing leakage electrons out of the active zone.
A method of producing a LED device having increased quantum efficiency in the deep UV (DUV) region and simultaneous reduced parasitic luminescence comprising
- forming a semiconductor-based ultraviolet light emitting diode structure comprising
- a light emitting active region,
- one or more p-doped layer,
- an AlN or AlGaN injection layer with high aluminum content between the light emitting active region and the p-doped layer, wherein said injection layer has a thickness such that holes can tunnel from the p-side of the semiconductor-based ultraviolet light emitting diode structure through the injection layer in the active zone and also reducing leakage electrons out of the active zone, and
- incorporating said semiconductor-based ultraviolet light emitting diode structure into a LED device.
A semiconductor-based ultraviolet light emitting device comprising:
- a first semiconductor layer;
- a second semiconductor layer;
- and
- an active layer disposed between the first semiconductor layer and the second semiconductor layer, and
- an injection layer between said active region and a p-doped semiconductor layer, wherein said injection layer is an AlN or AlGaN injection layer with high aluminum content between the light emitting active region and the p-doped layer, wherein said injection layer has a thickness such that holes can tunnel from the p-side of the semiconductor-based ultraviolet light emitting diode structure through the injection layer in the active zone and also reducing leakage electrons out of the active zone, and
- a light generating structure.
Dependencies are inferred from the claim text.