Non-volatile semiconductor memory device and method for manufacturing the same

A non-volatile semiconductor memory device comprising a cell array layer including a first wire, one or more memory cells stacked on the first wire, and a second wire formed on the memory cell so as to cross the first wire,

• the memory cell including a current rectifying element and a variable resistance element,
• the current rectifying element being connected to the first wire via a first electrode,
• the variable resistance element being connected to the current rectifying element via a second electrode and being connected to the second wire via a third electrode, and
• the current rectifying element, the variable resistance element, and the first to third electrodes being provided on a side surface thereof with a sidewall nitrided layer.

A method for manufacturing a non-volatile semiconductor memory device including a cell array layer including a first wire, a memory cell stacked on the first wire, and a second wire formed on the memory cell so as to cross the first wire, the memory cell including a current rectifying element and a variable resistance element, comprising:

• forming a first wiring layer forming the first wire;
• forming above the first wiring layer a semiconductor layer forming the current rectifying element and a variable resistance element layer forming the variable resistance element;
• selectively removing the variable resistance element layer and the semiconductor layer;
• and
• performing a nitridation of sidewalls of the variable resistance element layer and the semiconductor layer.