Charged particle beam device and method of manufacture of sample
AssigneeHitachi High-Technologies Corporation
InventorsTerutaka Nanri, Satoshi Tomimatsu, Toshihide Agemura
Life of this patent
Estimating the term…
Loading patent…
AssigneeHitachi High-Technologies Corporation
InventorsTerutaka Nanri, Satoshi Tomimatsu, Toshihide Agemura
Estimating the term…
A precision of removal of a damaged layer of a sample created by machining with an FIB machining device depends on a skill of an operator. During removal machining of the damaged layer generated by an ion beam, transmitted electrons which are generated by irradiating an electron beam formed in an electron beam optics system onto a sample are detected by a two-dimensional detector, and a moment for finishing the removal machining of the damaged layer is determined based on the amount of blur of a diffraction pattern acquired with the two-dimensional detector.
A charged particle beam device comprising:
A method for creating a sample using a charged particle beam device having an ion source, an ion beam optics system apparatus for irradiating an ion beam, a first control unit for controlling the irradiation of the ion beam, an electron source, an electron beam optics system apparatus for irradiating an electron beam, a second control unit for controlling the irradiation of the electron beam, a sample holding mechanism for holding a sample, a vacuum container, and a two-dimensional detector for acquiring a diffraction pattern which is created by electrons passing through the sample out of the electron beam, comprising the steps of:
A charged particle beam device comprising:
Dependencies are inferred from the claim text.