Manufacturing apparatus

A manufacturing apparatus growing a multi-layered film as a magneto-resistance element over a substrate, comprising:

• a transfer chamber including a substrate transfer mechanism;
• a first sputtering deposition chamber including one sputtering cathode;
• a second sputtering deposition chamber including one sputtering cathode;
• a third sputtering deposition chamber including one sputtering cathode;
• a fourth sputtering deposition chamber including two or more sputtering cathodes;
• a fifth sputtering deposition chamber including two or more sputtering cathodes;
• and
• a process chamber for performing a process other than sputtering, wherein
• the first sputtering deposition chamber, the second sputtering deposition chamber, the third sputtering deposition chamber, the fourth sputtering deposition chamber, the fifth sputtering deposition chamber, and the process chamber are arranged around the transfer chamber so that each is able to perform delivery and receipt of the substrate with the transfer chamber,
• the multi-layered film includes a first film that includes a metal film having a thickness not smaller than 10 nm, a second film that includes a metal film having a thickness not smaller than 10 nm, and a third film that includes at least one layer of an oxide film, a nitride film, and a semiconductor film, and
• the first sputtering deposition chamber forms the first film and the second sputtering deposition chamber forms the second film.

A manufacturing apparatus growing a multi-layered film as a magneto-resistance element over a substrate, comprising:

• a transfer chamber including a substrate transfer mechanism;
• a first sputtering deposition chamber including one sputtering cathode;
• a second sputtering deposition chamber including one sputtering cathode;
• a third sputtering deposition chamber including one sputtering cathode;
• a fourth sputtering deposition chamber including two or more sputtering cathodes;
• a fifth sputtering deposition chamber including two or more sputtering cathodes;
• and
• a process chamber for performing a process other than sputtering, wherein
• the first sputtering deposition chamber, the second sputtering deposition chamber, the third sputtering deposition chamber, the fourth sputtering deposition chamber, the fifth sputtering deposition chamber, and the process chamber are arranged around the transfer chamber so that each is able to perform delivery and receipt of the substrate with the transfer chamber,
• the multi-layered film includes a first film that includes a metal film having a thickness larger in a different order of magnitude than the thinnest film in the multi-layered film, a second film that includes a metal film having a thickness larger in a different order of magnitude than the thinnest film, and a third film that includes at least one layer of an oxide film, a nitride film, and a semiconductor film, and
• the first sputtering deposition chamber forms the first film and the second sputtering deposition chamber forms the second film.

A manufacturing method of growing a multi-layered film as a magneto-resistance element including

• a first film that includes a magnetization fixing layer;
• a second film that includes a magnetization free layer;
• and
• a third film that includes at least one layer of an oxide film, a nitride film, and a semiconductor film disposed between the first film and the second film, the method comprising:
• forming the third film in a first sputtering deposition chamber including one sputtering cathode;
• depositing at least the magnetization fixing layer in a second sputtering deposition chamber including two or more sputtering cathodes;
• and
• forming a plurality of films including the magnetization free layer in a third sputtering deposition chamber including two or more sputtering cathodes.

A manufacturing method of growing a multi-layered film as a magneto-resistance element including

• a first film that includes a metal film having a thickness not smaller than 10 nm;
• a second film that includes a metal film having a thickness not smaller than 10 nm;
• a third film that includes at least one layer of an oxide film, a nitride film, and a semiconductor film deposited between the first film and the second film;
• a magnetization fixing layer including a plurality of films, and
• a magnetization free layer, the method comprising:
• forming the first film in a first sputtering deposition chamber including one sputtering cathode;
• forming the second film in a second sputtering deposition chamber including one sputtering cathode;
• depositing at least the magnetization fixing layer in a third sputtering deposition chamber including two or more sputtering cathodes;
• and
• forming a plurality of films including the magnetization free layer in a fourth sputtering deposition chamber including two or more sputtering cathodes.

A manufacturing method of growing a multi-layered film as a magneto-resistance element over a substrate, wherein the multi-layered film includes

• a first film that includes a metal film having a thickness larger in a different order of magnitude than the thinnest film in the multi-layered film;
• a second film that includes a metal film having a thickness larger in a different order of magnitude than the thinnest film;
• a third film that includes at least one layer of an oxide film, a nitride film, and a semiconductor film;
• a magnetization fixing layer including a plurality of films;
• and
• a magnetization free layer,
• the method comprising:
• forming the first film in a first sputtering deposition chamber including one sputtering cathode;
• forming the second film in a second sputtering deposition chamber including one sputtering cathode;
• depositing at least the magnetization fixing layer in a third sputtering deposition chamber including two or more sputtering cathodes;
• and
• forming a plurality of films including the magnetization free layer in a fourth sputtering deposition chamber including two or more sputtering cathodes.