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US 2013/0273733 A1Published application
Methods for Depositing Manganese and Manganese Nitrides
AssigneeApplied Materials, Inc.
InventorsJing Tang, Zhefeng Li, Paul F. Ma, David Thompson
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Abstract
Described are manganese-containing films, as well as methods for providing the manganese-containing films. Doping manganese-containing films with Co, Mn, Ru, Ta, Al, Mg, Cr, Nb, Ti or V allows for enhanced copper barrier properties of the manganese-containing films. Also described are methods of providing films with a first layer comprising manganese silicate and a second layer comprising a manganese-containing film.
Claims20
A method of forming a manganese-containing film, the method comprising:
- providing a substrate and
- exposing the substrate to a first precursor and a reactant, the first precursor comprising a manganese-containing organometallic compound to deposit a manganese-containing film, wherein the manganese-containing organometallic compound of the formula
- where each A is independently selected from carbon or silicon and each R is independently selected from hydrogen, methyl, substituted or un-substituted alkanes, branched or un-branched alkanes, substituted or un-substituted alkenes, branched or un-branched alkenes, substituted or un-substituted alkynes, branched or un-branched alkynes or substituted or un-substituted aromatics.
A method for forming interconnections in a microelectronic device, the method comprising:
- providing a substrate comprising a dielectric layer disposed thereon, the dielectric layer an opening that permits conduction to an underlying layer,
- exposing the substrate to a first precursor and a reactant, the first precursor comprising a manganese-containing organometallic compound to deposit a manganese-containing film on at least a portion of the dielectric layer, wherein the manganese-containing organometallic compound of the formula
- where each A is independently selected from carbon or silicon and each R is independently selected from hydrogen, methyl, substituted or un-substituted alkanes, branched or un-branched alkanes, substituted or un-substituted alkenes, branched or un-branched alkenes, substituted or un-substituted alkynes, branched or un-branched alkynes or substituted or un-substituted aromatics;
- and
- depositing a conductive material over the manganese-containing film that may also be over the opening that permits conduction to an underlying layer.
2 more elements
Dependencies are inferred from the claim text.