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US 2013/0273688 A1Published application
Organic thin-film transistors
AssigneeXerox Corporation
InventorsYuning Li, Yiliang Wu, Ping Liu, Paul F. Smith
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Abstract
A thin-film transistor comprises a semiconducting layer comprising a semiconducting material selected from Formula (I) or (II): wherein X, R1, R2, R3, R4, R5 a, b, and n are as described herein. Semiconducting compositions of Formula (I) or (II) are also described.
Claims20
A method for forming a semiconductor layer, comprising:
- depositing a liquid composition onto a substrate to form the semiconducting layer;
- wherein the liquid composition comprises a semiconducting material selected from Formula (I) or Formula (II):
- wherein X is independently selected from S and Se in Formula (I) and X is independently selected from S, Se, and O in Formula (II);
- R1 is independently selected from hydrogen, alkyl, substituted alkyl, aryl, substituted aryl, heteroaryl, halogen, —CN, —NO2, and ethynylsilane;
- R2, R3, R4, and R5 are independently selected from hydrogen, alkyl, substituted alkyl, aryl, substituted aryl, heteroaryl, halogen, —CN, and —NO2;
- Ar and Ar′ are independently a conjugated divalent moiety;
- a and b are independently integers from 1 to about 10;
- and
- n is an integer and is at least 2.
6 more elements
Dependencies are inferred from the claim text.