Cvd apparatus and cvd method
AssigneeCanon Anelva Corporation
InventorsGe XU, Kazuto YAMANAKA, Tsutomu HIROISHI, Shogo HIRAMATSU
Life of this patent
Estimating the term…
Loading patent…
AssigneeCanon Anelva Corporation
InventorsGe XU, Kazuto YAMANAKA, Tsutomu HIROISHI, Shogo HIRAMATSU
Estimating the term…
The objective of the present invention is to provide a plasma CVD apparatus capable of improving the speed of carbon film deposition onto a substrate to be processed, decreasing the cleaning frequency by reducing deposition on members other than the substrate to be processed, and being manufactured inexpensively. One embodiment of the present invention is a CVD apparatus including a vacuum vessel, magnetic-field producing means for producing a magnetic field inside the vacuum vessel, plasma producing means for producing a plasma inside the vacuum vessel, and a substrate holder configured to hold a substrate inside the vacuum vessel, and the plasma producing means has an electrode provided inside the substrate holder and a power source configured to apply voltage to the electrode.
A CVD apparatus characterized in that
4-5. (canceled)
A CVD apparatus characterized in that
A CVD method for performing a film formation process on a substrate in a vacuum vessel having thereinside a substrate holder which is holding the substrate, magnetic-field producing means which is producing a magnetic field, and a shield provided at a position opposite from the substrate holder and grounded, the magnetic field-producing means being located between an inner wall of the vacuum vessel and the shield, the method comprising the steps of:
Dependencies are inferred from the claim text.