Semiconductor device and method of manufacturing the same

A semiconductor device comprising:

• a semiconductor substrate having a principal surface;
• a first conductor formed over the semiconductor substrate, the first conductor including first side wall portions in opposition to each other at a separation of a first distance in a horizontal direction and a first bottom portion continuously formed to connect between the first side wall portions;
• a second conductor formed over the semiconductor substrate, the second conductor including second side wall portions in opposition to each other at a separation of a second distance in a horizontal direction and a second bottom portion continuously formed to connect between the second side wall portions, the second distance being larger than the first distance;
• a third conductor formed at least over outer surfaces of both sides of the first side wall portions of the first conductor through a dielectric layer;
• and
• a fourth conductor formed at least over outer surfaces of both sides of the second side wall portions of the second conductor through a dielectric layer,
• wherein one of top ends of the first side wall portions is located at a position lower than the other of the top ends of the first side wall portions.

A semiconductor device comprising:

• a semiconductor substrate having a principal surface;
• a first conductor formed over the semiconductor substrate, the first conductor including first side wall portions in opposition to each other and a first bottom portion continuously formed to connect between the first side wall portions, and top ends of the first side wall portions being at a separation of a first distance;
• a second conductor formed over the semiconductor substrate, the second conductor including second side wall portions in opposition to each other and a second bottom portion continuously formed to connect between the second side wall portions, top ends of the second side wall portions being at a separation of a second distance, and the second distance being larger than the first distance;
• a third conductor formed at least over outer surfaces of both sides of the first side wall portions of the first conductor through a dielectric layer;
• and
• a fourth conductor formed at least over outer surfaces of both sides of the second side wall portions of the second conductor through a dielectric layer,
• wherein one of the top ends of the first side wall portions is located at a position lower than the other of the top ends of the first side wall portions.

A semiconductor device comprising:

• a semiconductor substrate having a principal surface;
• a first conductor formed over the semiconductor substrate, the first conductor including first side wall portions in opposition to each other and a first bottom portion continuously formed to connect between the first side wall portions, and top ends of the first side wall portions being at a separation of a first distance;
• a second conductor formed over the semiconductor substrate, the second conductor including second side wall portions in opposition to each other and a second bottom portion continuously formed to connect between the second side wall portions, top ends of the second side wall portions being at a separation of a second distance, and the second distance being larger than the first distance;
• a third conductor formed at least over outer surfaces of both sides of the first side wall portions of the first conductor through a dielectric layer;
• a fourth conductor formed at least over outer surfaces of both sides of the second side wall portions of the second conductor through a dielectric layer;
• and
• a cap film having an end portion that is horizontally extended in a shape of an eaves and is in contact with the second conductor at a contact portion of at least one of the outer surfaces of the second side wall portions,
• wherein one of the top ends of the first side wall portions is located at a position lower than the other of the top ends of the first side wall portions.