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US 2013/0270673 A1Published application
Doped electrodes for dram applications
AssigneesElpida Memory, Inc., Intermolecular, Inc.
InventorsXiangxin Rui, Hiroyuki Ode
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Abstract
A metal oxide first electrode layer for a MIM DRAM capacitor is formed wherein the first and/or second electrode layers contain one or more dopants up to a total doping concentration that will not prevent the electrode layers from crystallizing during a subsequent anneal step. One or more of the dopants has a work function greater than about 5.0 eV. One or more of the dopants has a resistivity less than about 1000 μΩ cm. Advantageously, the electrode layers are conductive molybdenum oxide.
Claims16
A semiconductor layer stack comprising:
- a first electrode layer formed on a substrate,
- wherein the first electrode layer comprises molybdenum oxide and one or more dopants, the one or more dopants comprising Ni, Ir, Pt, RuO2, IrO2, NiO or combinations thereof;
- a dielectric layer formed on the first electrode layer, the dielectric layer comprising titanium oxide;
- and
- a second electrode layer formed on the dielectric layer,
- wherein the one or more dopants have a predetermined concentration such that the molybdenum oxide is in a crystalline phase prior to forming the dielectric layer on the first electrode layer,
- wherein the second electrode layer comprises a metal element, and
- wherein the first electrode layer serves as a template for a rutile phase of titanium oxide of the dielectric layer while forming the dielectric layer on the first electrode layer.
5 more elements
Dependencies are inferred from the claim text.