Non-Uniform Semiconductor Device Active Area Pattern Formation
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsTsung-Lin Lee, Shao-Ming Yu
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Abstract
In accordance with an embodiment, a semiconductor device comprises at least three active areas. The at least three active areas are proximate. Longitudinal axes of the at least three active areas are parallel, and each of the at least three active areas comprises an edge intersecting the longitudinal axis of the respective active area. The edges of the at least three active areas form an arc.
Claims20
A semiconductor device comprising at least three active areas, wherein the at least three active areas are proximate, wherein longitudinal axes of the at least three active areas are parallel, wherein each of the at least three active areas comprises an edge intersecting the longitudinal axis of the respective active area, and wherein the edges of the at least three active areas form an arc.
A semiconductor device comprising:
- a substrate comprising at least three semiconductor fins, the semiconductor fins neighboring each other;
- and
- gate structure portions over respective ones of the semiconductor fins, each gate structure portion defining a direction of current flow in the respective semiconductor fin, each of the semiconductor fins having a length that is parallel to the respective direction of current flow, the lengths of the semiconductor fins being parallel to each other, each of the lengths intersecting a respective edge of the respective semiconductor fin, the edges of the at least three semiconductor fins forming an arc.
A semiconductor device comprising:
- at least three fins on a substrate, the at least three fins having parallel lengths, respective edges of the fins forming an arc;
- a gate dielectric over the at least three fins;
- and
- a gate electrode over the gate dielectric.
Dependencies are inferred from the claim text.