Aspect Ratio Dependent Deposition to Improve Gate Spacer Profile, Fin-Loss and Hardmask-Loss for FinFET Scheme

A method for preparing a spacer on a substrate structure, the method comprising:

• providing a first structure on a substrate, the first structure having a first top portion extending a first height from the substrate;
• providing a second structure on the substrate adjacent to the first structure, the second structure having a second top portion extending a second height from the substrate, the first height extending farther from the substrate as compared to the second height;
• depositing a conformal spacer material layer over the first structure and over the second structure;
• performing a deposition process that deposits a polymer protection layer on the conformal spacer material layer, the deposition process including creating a monomer within a plasma formed above the substrate, the monomer flowing substantially isotropically towards the substrate, the monomer having a sticking coefficient sufficient such that a first thickness of the polymer protection layer formed on the first top portion of the first structure is thicker as compared to a second thickness of the polymer protection layer formed on the second top portion of the second structure;
• and
• performing a spacer etch process that removes the conformal spacer material layer from the second structure, while retaining the conformal spacer material layer on at least part of the first structure.