Methods and compositions for doping silicon substrates with molecular monolayers
AssigneeDynaloy, LLC
InventorsKimberly Dona Pollard, Allison C. Tonk
Life of this patent
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Abstract
Compositions and methods for doping silicon substrates by treating the substrate with a diluted dopant solution comprising tetraethylene glycol dimethyl ether (tetraglyme) and a dopant-containing material and subsequently diffusing the dopant into the surface by rapid thermal annealing. Diethyl-1-propylphosphonate and allylboronic acid pinacol ester are preferred dopant-containing materials, and are preferably included in the diluted dopant solution in an amount ranging from about 1% to about 20%, with a dopant amount of 4% or less being more preferred.
Claims20
A method, comprising:
- contacting a silicon-containing substrate with a dopant solution to form a layer of dopant-containing material on the silicon-containing substrate, the dopant solution including a solvent and a dopant, wherein the dopant solution has a flash point greater than 120° C.
A method, comprising:
- contacting a surface including crystalline silicon with a dopant solution to form a layer of dopant-containing material on the surface, the dopant solution including a solvent and a dopant, wherein the solvent is a polar solvent.
A method comprising:
- contacting a silicon-containing surface with a dopant solution to form a layer of dopant-containing material on the silicon-containing surface, the dopant solution including a solvent and arsenic-containing molecules.
Dependencies are inferred from the claim text.