US 2013/0260515 A1 · METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

Abstract

A method of manufacturing an RC-IGBT provided with an IGBT and an FWD on the same substrate is provided. First, top surface device structures of an IGBT and an FWD are formed on the top surface of a semiconductor substrate. Then, with the side of an IGBT region on the top surface of the semiconductor substrate shielded by a first shielding mask, only an FWD region is irradiated with light ions. Next, with the side of the FWD region on the bottom surface of the semiconductor substrate shielded by a second shielding mask, only the IGBT region is irradiated with light ions. With this, a first lifetime control region 10-1 is formed on the collector side A2 in the IGBT region A1-A2 and a second lifetime control region 10-2 is formed on the anode side B1 of the FWD region B1-B2.

Claims16

Dependent claims

A method of manufacturing a semiconductor device having a first semiconductor element provided in a first region in a semiconductor substrate, and a second semiconductor element provided in a second region in the semiconductor substrate, the method comprising:

preparing a light ion source and a mask;
shielding a side of the first region on a top surface of the semiconductor substrate by using the mask;
irradiating the top surface of the semiconductor substrate, the side of the first region thereon being shielded with the mask, with light ions by operating the light ion source to introduce lattice defects at a specified depth on a side of the second region on the top surface of the semiconductor substrate;
irradiating a bottom surface of the semiconductor substrate with light ions by operating the light ion source to introduce lattice defects at a specified depth on the bottom surface of the semiconductor substrate.

1 more element

preparing a light ion source, a first mask and a second mask;
shielding a side of the first region on a top surface of the semiconductor substrate by using the first mask;
irradiating the top surface of the semiconductor substrate, the side of the first region thereon being shielded with the first mask, with light ions by operating the light ion source to introduce lattice defects at a specified depth on a side of the second region on the top surface of the semiconductor substrate;
shielding the side of the second region on a bottom surface of the semiconductor substrate by using the second mask;
and
irradiating the bottom surface of the semiconductor substrate, the side of the second region thereon being shielded with the second mask, with light ions by operating the light ion source to introduce lattice defects at a specified depth on the side of the first region on the bottom surface of the semiconductor substrate.

3 more elements

Dependencies are inferred from the claim text.

Method of manufacturing semiconductor device

Life of this patent

Method of manufacturing semiconductor device

Life of this patent

Abstract

Claims16