Non-volatile semiconductor memory device and method of reading data therefrom
AssigneeKabushiki Kaisha Toshiba
InventorYasushi NAGADOMI
Life of this patent
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Abstract
A non-volatile semiconductor memory device according to an aspect includes a memory cell array and a control circuit. The memory cell array includes a plurality of memory cells, and stores initial setting data in each of a plurality of storage areas. The control circuit reads the initial setting data from the storage areas. The control circuit is configured to read, when it detects an error in the initial setting data read from one of the storage areas, initial setting data from another storage area.
Claims18
A non-volatile semiconductor memory device comprising:
- a memory cell array comprising a plurality of memory cells, and storing initial setting data in each of a plurality of storage areas;
- and
- a control circuit configured to read the initial setting data from the storage areas,
- the control circuit being configured to read, when the control circuit detects an error in the initial setting data read from one of the storage areas, initial setting data from another storage area.
A method of reading data from a non-volatile semiconductor memory device, the non-volatile semiconductor memory device comprising a memory cell array comprising a plurality of memory cells and storing initial setting data in each of a plurality of storage areas,
- the method comprising reading, when an error is detected in the initial setting data read from one of the storage areas, initial setting data from another storage area.
Dependencies are inferred from the claim text.