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US 2013/0258774 A1Published application
Reading memory cell history during program operation for advaptive programming
AssigneeMicron Technology, Inc.
InventorsAngelo Visconti, Mattia Robustelli, Silvia Beltrami, Laura Tatiana Czeppel, Massimo Ernesto Bertuccio
Life of this patent
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Abstract
Subject matter disclosed herein relates to a memory device, and more particularly to write performance of a memory device.
Claims22
A method comprising:
- storing user-data in a first memory portion of a memory array, the first memory portion comprising a first plurality of memory cells having a first threshold voltage;
- and
- storing use-history information regarding the first memory portion in a second memory portion of the memory array, the second memory portion comprising a second plurality of memory cells having a second threshold voltage, the second threshold voltage being greater than the first threshold voltage.
A memory device comprising:
- a first memory portion of a memory array comprising a first plurality of memory cells for storing user data;
- and
- a second memory portion of the memory array comprising a second plurality of memory cells for storing use-history information regarding the first memory portion, the second plurality of memory cells having a second threshold voltage greater than a first threshold voltage of the first plurality of memory cells.
Dependencies are inferred from the claim text.