Dual-port sram with bit line clamping
AssigneeLattice Semiconductor Corporation
InventorsBrad Sharpe-Geisler, Timothy Scott Swensen, Sam Tsai, Fabiano Fontana
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AssigneeLattice Semiconductor Corporation
InventorsBrad Sharpe-Geisler, Timothy Scott Swensen, Sam Tsai, Fabiano Fontana
Estimating the term…
In one embodiment, a memory includes a plurality of bit lines and a write driver for driving a driven bit line selected from the plurality of bit lines during a write operation. The write driver is coupled to an internal node. A first stage clamping circuit is operable to clamp the internal node to a clamping voltage if the write operation is not enabled and is further operable to unclamp the internal node during the write operation. The memory further includes a multiplexer for selectively coupling the driven bit line to the internal node. A second stage clamping circuit is operable to clamp the plurality of bit lines to a clamping voltage if the write operation is not enabled and is further operable to unclamp the driven bit line during the write operation.
A memory, comprising:
A memory, comprising:
A memory, comprising:
Dependencies are inferred from the claim text.