LED Light Module and LED Chip

An LED light module including a plurality of LED wafers, a heat dispreading plate, an outer insulator, a high-voltage insulation plate, and a thermal conductive core,

• wherein said LED wafers are set on one face of said heat spreading plate which is defined as Face A of said heat dispreading plate,
• wherein said heat dispreading plate adopts copper or aluminum material or copper-aluminum composite material,
• wherein the area of said heat dispreading plate is five times larger than the sum area of said LED wafers on said heat dispreading plate,
• wherein said high-voltage insulation plate is set between Face B of said heat dispreading plate and the heat absorption face of said thermal conductive core,
• wherein said high-voltage insulation plate adopts a ceramic wafer with a thickness of more than 0.15 mm,
• wherein said outer insulator is arranged around the peripheral sidewall of said heat dispreading plate and is connected with said high-voltage insulation plate, the whole outer circumferential edge and Face B of said heat dispreading plate are surrounded by said outer insulator and said high-voltage insulation plate so as to be insulated and separated from said thermal conductive core and an outer conductor nearby,
• wherein the whole peripheral edge of said high-voltage insulation plate has an insulation strength enhancing structure in which:
• the heat adsorption face of said thermal conductive core is provided with a protruding portion, wherein the size of the peripheral edge of said protruding portion is smaller than the size of the peripheral edge of said high-voltage insulation plate, or
• the size of the peripheral edge of said high voltage insulation plate is larger than the size of the peripheral edge of said heat dispreading plate, or
• the peripheral edge of Face B of said heat dispreading plate adopts a chamfering structure, or
• Face B of said heat dispreading plate adopts a protruding portion, wherein the size of the peripheral edge of the protruding portion is smaller than the size of the peripheral edge of said high-voltage insulation plate.

An LED chip including a plurality of LED wafers, a heat dispreading plate, an outer insulator and a high-voltage insulation plate,

• wherein that said LED wafers are set on one face of said heat spreading plate which is defined as Face A of said heat dispreading plate,
• wherein said heat dispreading plate adopts copper or aluminum material or copper-aluminum composite material,
• wherein the area of said heat dispreading plate is five times larger than the sum area of said LED wafers on said heat dispreading plate,
• wherein the thickness of said heat dispreading plate is larger than 0.4 mm,
• wherein said high-voltage insulation plate is set on Face B of said heat dispreading plate,
• wherein said high-voltage insulation plate adopts a ceramic wafer which is sintered into ceramics, with a thickness of more than 0.15 mm,
• wherein said outer insulator is arranged around the peripheral sidewall of said heat dispreading plate and is connected with said high-voltage insulation plate, the whole outer circumferential edge and Face B of said heat dispreading plate are surrounded by said outer insulator and said high-voltage insulation plate so as to be insulated and separated from said thermal conductive core and an outer conductor nearby.

An LED chip including a plurality of LED wafers, a heat dispreading plate, an outer insulator and a high-voltage insulation plate,

• wherein that said LED wafers are set on one face of said heat spreading plate which is defined as Face A of said heat dispreading plate,
• wherein said heat dispreading plate adopts copper or aluminum material or copper-aluminum composite material,
• wherein the area of said heat dispreading plate is five times larger than the sum area of said LED wafers on said heat dispreading plate,
• wherein said high-voltage insulation plate is set on Face B of said heat dispreading plate,
• wherein said high-voltage insulation plate adopts a ceramic wafer with a thickness of more than 0.15 mm,
• wherein said outer insulator is arranged around the peripheral sidewall of said heat dispreading plate and is connected with said high-voltage insulation plate, the whole outer circumferential edge and Face B of said heat dispreading plate are surrounded by said outer insulator and said high-voltage insulation plate so as to be insulated and separated from said thermal conductive core and an outer conductor nearby.
• wherein the whole peripheral edge of said high-voltage insulation plate has an insulation strength enhancing structure in which:
• the size of the peripheral edge of said high voltage insulation plate is larger than the size of the peripheral edge of said heat dispreading plate, or
• the peripheral edge of Face B of said heat dispreading plate adopts a chamfering structure, or
• Face B of said heat dispreading plate adopts a protruding portion, wherein the size of the peripheral edge of the protruding portion is smaller than the size of the peripheral edge of said high-voltage insulation plate.