Pzt-based ferroelectric thin film and method of manufacturing the same

A method of manufacturing a PZT-based ferroelectric thin film on a lower electrode by coating, calcining, and then firing so as to crystallize a PZT-based ferroelectric thin film-forming composition on the lower electrode of a substrate having the lower electrode in which a crystal plane is oriented in a (111) axis direction,

• wherein some of the ferroelectric thin film-forming composition is coated, calcined, and fired on the lower electrode so as to form the orientation controlling layer,
• a remainder of the ferroelectric thin film-forming composition is coated, calcined, and fired on the orientation controlling layer so as to form a film thickness adjusting layer having the same crystal orientation as a crystal orientation of the orientation controlling layer,
• calcination and firing are controlled during formation of the orientation controlling layer so as to have an interface between the orientation controlling layer and the film thickness adjusting layer, and
• a coating amount of some of the ferroelectric thin film-forming composition is set so that a layer thickness of the crystallized orientation controlling layer becomes in a range of 45 nm to 270 nm, thereby making crystals in the orientation controlling layer preferentially oriented in a (111) plane.