Semiconductor device and manufacturing method for the same

A manufacturing method for a semiconductor device comprising:

• forming a first circuit element in a first circuit region of a substrate;
• forming a multilayer wiring layer on the substrate, the multilayer wiring layer being composed of a plurality of wiring layers and a plurality of via layers that are laminated each other;
• and
• forming an electrode pad on the multilayer wiring layer, wherein
• at the time of forming the multilayer wiring layer, an interlayer insulating film is formed in a region of a first wiring layer that is a top layer of the plurality of wiring layers, in the region the electrode pad and the first circuit region overlapping each other in a planar view of the electrode pad.