Methods and apparatuses to form self-aligned caps
AssigneeIntel Corporation
InventorsBoyan Boyanov, Kanwal Jit Singh
Life of this patent
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Abstract
At least one conductive line in a dielectric layer over a substrate is recessed to form a channel. The channel is self-aligned to the conductive line. The channel can be formed by etching the conductive line to a predetermined depth using a chemistry comprising an inhibitor to provide uniformity of etching independent of a crystallographic orientation. A capping layer to prevent electromigration is deposited on the recessed conductive line in the channel. The channel is configured to contain the capping layer within the width of the conductive line.
Claims20
A method to manufacture an electronic device, comprising:
- recessing at least one conductive line in a dielectric layer over a substrate to form a channel;
- and
- depositing a capping layer on the recessed conductive line in the channel to prevent electromigration.
A method to control line edge roughness, comprising:
- etching at least one conductive line in a dielectric layer over a substrate with a first chemistry to a predetermined depth to form a channel self-aligned to the conductive line, wherein the channel is configured to contain a capping layer within a width of the at least one conductive line, and wherein the first chemistry comprises an inhibitor configured to provide uniformity of etching independent of a crystallographic orientation.
An apparatus, comprising:
- at least one first conductive line in a dielectric layer over a substrate,
- and
- a first capping layer selectively deposited on the at least one first conductive line within first sidewalls of the dielectric layer to prevent electromigration.
Dependencies are inferred from the claim text.