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US 2013/0256891 A1Published application
Semiconductor device with a copper line and method for manufacturing the same
AssigneeSK hynix Inc.
InventorHyung Jin PARK
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Abstract
A semiconductor device with a copper line comprises a lower portion of a copper pattern buried in an interlayer insulating film, an upper portion of the copper disposed over the upper portion of the lower copper pattern, and an upper barrier metal layer disposed over upper and side surfaces of the upper copper pattern. As a result, the copper pattern is protected by the barrier metal layers, providing a metal line with a stable structure.
Claims19
A semiconductor device, comprising:
- A copper pattern disposed over a substrate, the copper pattern including a lower copper pattern portion disposed below an upper surface of an interlayer insulating film, and an upper copper pattern portion disposed over the lower copper pattern portion and above the upper surface of the interlayer insulating film;
- and
- an upper barrier metal layer disposed over a side surface and an upper surface of the copper pattern.
A method for manufacturing a semiconductor device, the method comprising:
- filling a trench in an interlayer insulating film with a copper pattern;
- removing a portion of the interlayer insulating film to expose a portion of the copper pattern;
- forming an upper barrier metal layer over the exposed copper pattern and the interlayer insulating pattern;
- forming a mask layer over the upper barrier metal layer;
- and
- etching portions of the upper barrier metal layer disposed over the interlayer insulating film and between adjacent copper patterns using the mask layer as an etching mask.
3 more elements
Dependencies are inferred from the claim text.