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US 2013/0256790 A1Published application
Semiconductor device and method for manufacturing the same
AssigneeSK hynix Inc.
InventorChi Hwan JANG
Life of this patent
Estimating the term…
Abstract
A semiconductor device includes buried gates formed in a semiconductor substrate in which active regions and an isolation layer are defined. A bit line is coupled to an active region between the buried gates and disposed to cross the buried gates. In the 6F2 structure, characteristics of the semiconductor device are improved by applying omitting a bit line contact plug.
Claims19
A semiconductor device, comprising:
- a plurality of buried gates formed in a semiconductor substrate, the semiconductor substrate including active regions and an isolation layer;
- and
- a bit line coupled to an active region between the buried gates, the bit line being arranged to cross the buried gates.
A method for manufacturing a semiconductor device, the method comprising:
- forming buried gates in a semiconductor substrate, the semiconductor substrate including an active region and an isolation layer;
- and
- forming a bit line to be coupled to the active region between the buried gates, the bit line crossing the buried gates.
Dependencies are inferred from the claim text.