Electrodes for resistance change memory devices

A method comprising:

• forming a storage structure of a phase change memory (PCM) device, the storage structure having a chalcogenide material;
• forming an electrode having an electrically conductive material, the electrode having a first surface that is directly coupled with the storage structure;
• and
• forming a dielectric film having a dielectric material, the dielectric film being directly coupled with a second surface of the electrode that is disposed opposite to the first surface.

A system comprising:

• a processor;
• and
• a phase change memory (PCM) device coupled to the processor, the PCM device including:
• a storage structure having a chalcogenide material;
• an electrode having an electrically conductive material, the electrode having a first surface that is directly coupled with the storage structure;
• and
• a dielectric film having a dielectric material, the dielectric film being directly coupled with a second surface of the electrode that is disposed opposite to the first surface.