Ferroelectric thin film-forming sol-gel solution
AssigneeMitsubishi Materials Corporation
InventorsToshihiro Doi, Hideaki Sakurai, Toshiaki Watanabe, Nobuyuki Soyama
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AssigneeMitsubishi Materials Corporation
InventorsToshihiro Doi, Hideaki Sakurai, Toshiaki Watanabe, Nobuyuki Soyama
Estimating the term…
When a ferroelectric thin film-forming sol-gel solution contains a PZT-based compound, a viscosity-adjusting macromolecular compound including polyvinylpyrrolidone, and an organic dopant including a formamide-based solvent, the PZT-based compound is included at 17 mass % or more in terms of an oxide, the molar ratio of the polyvinylpyrrolidone to the PZT-based compound is PZT-based compound:polyvinylpyrrolidone=1:0.1 to 0.5 in terms of a monomer, and the formamide-based solvent is included at 3 mass % to 13 mass % of the sol-gel solution, it is possible to form a thick layer by coating the sol-gel solution once, the production efficiency improves, and crack-free and dense film formation even after calcination and firing becomes possible.
A ferroelectric thin film-forming sol-gel solution comprising:
Dependencies are inferred from the claim text.