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US 2013/0256265 A1Published application
Sequential Infiltration Synthesis for Enhancing Multiple-Patterning Lithography
AssigneeUchicago Argonne, LLC
InventorsSeth B. Darling, Jeffrey W. Elam, Yu-Chih Tseng
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Abstract
Simplified methods of multiple-patterning photolithography using sequential infiltration synthesis to modify the photoresist such that it withstands plasma etching better than unmodified resist and replaces one or more hard masks and/or a freezing step in MPL processes including litho-etch-litho-etch photolithography or litho-freeze-litho-etch photolithography.
Claims19
A method of preparing inorganic features with multiply-patterned nanostructures, comprising:
- preparing a first iteration of inorganic features providing a first pattern for a substrate using SIS treatment;
- preparing a second iteration of inorganic features providing a second pattern for the substrate;
- and
- engraving a double- or multiple-density pattern reflecting the first pattern and the second pattern and further patterns onto the substrate.
1 more element
A method of multiple-patterning lithography comprising:
- applying a first pattern on a substrate stack, the top layer of which is a block copolymer scaffold,
- infiltrating the pattern using Sequential Infiltration Synthesis;
- exposing a second pattern to the substrate stack;
- and
- etching the substrate stack to engrave the first pattern and the second pattern into a substrate.
2 more elements
A method of multi-pattern lithography comprising:
- applying a first pattern on a substrate;
- coating the first pattern with a mask;
- applying a second pattern on the substrate and infiltrating the pattern using Sequential Infiltration Synthesis;
- etching the substrate to engrave the first pattern and the second pattern in the substrate.
1 more element
Dependencies are inferred from the claim text.