Substrate support with radio frequency (rf) return path

A substrate processing system, comprising:

• a physical vapor deposition process chamber having an inner volume;
• a shield to separate the inner volume into a processing volume and a non-processing volume and extending toward a ceiling of the process chamber;
• and
• a substrate support disposed below the shield, wherein the substrate support further comprises:
• a dielectric member having a surface to support a substrate thereon;
• a one or more first conductive members disposed below the dielectric member and having a dielectric member facing surface adjacent to the dielectric member;
• and
• a second conductive member disposed about and contacting the one or more first conductive members such that an RF energy provided to the substrate by an RF source returns to the RF source by traveling from one or more first conductive members to the second conductive member to the shield, wherein the RF energy travels radially outward from the substrate support along the dielectric member facing surface of the one or more first conductive members and along a first surface of the second conductive member disposed substantially parallel to a peripheral edge surface of the one or more first conductive members after travelling along the dielectric layer facing surface.