Substrate processing method and substrate processing apparatus
AssigneeDainippon Screen Mfg. Co., Ltd.
InventorHiroaki TAKAHASHI
Life of this patent
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Abstract
A substrate processing method includes a rinsing step of supplying water of a first temperature to a surface of a silicon substrate to apply a rinsing process using the water to the silicon substrate surface, a second temperature water supplying (coating) step of supplying water of a second temperature lower than the first temperature to the silicon substrate surface after the rinsing step, and a drying step of rotating the silicon substrate after the second temperature water supplying step to spin off the water on the silicon substrate surface to a periphery of the silicon substrate and thereby dry the silicon substrate.
Claims8
A substrate processing method comprising:
- a rinsing step of supplying water of a first temperature to a surface of a silicon substrate to apply a rinsing process using the water to the silicon substrate surface;
- a second temperature water supplying step of supplying water of a second temperature lower than the first temperature to the silicon substrate surface after the rinsing step;
- and
- a drying step of rotating the silicon substrate after the second temperature water supplying step to spin off the water on the silicon substrate surface to a periphery of the silicon substrate and thereby to dry the silicon substrate.
A substrate processing apparatus comprising:
- a substrate rotating unit that rotates a silicon substrate while holding the silicon substrate;
- a first temperature water supplying unit that supplies water of a first temperature to a surface of the silicon substrate held by the substrate rotating unit;
- a second temperature water supplying unit that supplies water of a second temperature lower than the first temperature to the surface of the silicon substrate held by the substrate rotating unit;
- and
- a control unit that controls the substrate rotating unit, the first temperature water supplying unit, and the second temperature water supplying unit to execute a rinsing step of supplying the water of the first temperature to the silicon substrate surface to apply a rinsing process using the water to the silicon substrate surface, a second temperature water supplying step of supplying the water of the second temperature to the silicon substrate surface after the rinsing step, and a drying step of rotating the silicon substrate after the second temperature water supplying step to spin off the water on the silicon substrate surface to a periphery of the silicon substrate and thereby to dry the silicon substrate.
Dependencies are inferred from the claim text.