Nonvolatile memory device, method of manufacturing the nonvolatile memory device, and memory module and system including the nonvolatile memory device

A method of manufacturing a nonvolatile memory device, the method comprising:

• forming a channel hole penetrating through a stacked structure of a plurality of sacrificial insulating layers and a plurality of first insulating layers, the stacked structure disposed on a substrate;
• forming a sacrificial spacer on a side wall of the channel hole;
• forming a semiconductor channel layer on the sacrificial spacer;
• etching the plurality of sacrificial insulating layers in the stacked structure and the sacrificial spacer so that a side wall of the semiconductor channel layer is exposed;
• and
• forming a gate conductive layer on the exposed side wall of the semiconductor channel layer,
• wherein an air gap is formed between the plurality of first insulating layers and the semiconductor channel layer.

A method of manufacturing a nonvolatile memory device, the method comprising:

• alternately stacking a plurality of sacrificial insulating layers and a plurality of first insulating layers on a substrate;
• forming a channel hole by selectively etching the plurality of sacrificial insulating layers and the plurality of first insulating layers;
• forming a sacrificial spacer on a side wall of the channel hole;
• forming a semiconductor channel layer contacting the sacrificial spacer;
• forming a wordline recess by etching the plurality of sacrificial insulating layers and the plurality of first insulating layers;
• etching the plurality of sacrificial insulating layers and the sacrificial spacer so that a side wall of the semiconductor channel layer is exposed;
• forming a gate insulating layer on the side wall of the channel layer;
• forming a gate conductive layer on the gate insulating layer;
• and
• forming a separating insulating layer filling the wordline recess,
• wherein the semiconductor channel layer is disposed in a zigzag pattern.