Semiconductor device and fabrication method thereof
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorsShunpei Yamazaki, Hideomi Suzawa, Koji Ono, Yoshihiro Kusuyama
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Abstract
For forming a gate electrode, a conductive film with low resistance including Al or a material containing Al as its main component and a conductive film with low contact resistance for preventing diffusion of Al into a semiconductor layer are laminated, and the gate electrode is fabricated by using an apparatus which is capable of performing etching treatment at high speed.
Claims21
(canceled)
A method for manufacturing an active matrix display device, comprising steps of:
- forming a semiconductor layer over a glass substrate;
- forming a first insulating film over the semiconductor layer;
- forming a conductive layer on and in contact with the first insulating film;
- forming a resist over the conductive layer, the resist having a first width;
- etching the conductive layer by using the resist so as to form a wiring;
- adding an element selected from an n-type impurity element and a p-type impurity element into the semiconductor layer at a first concentration rate with the wiring and the resist thereover as a first mask;
- etching both the wiring and the resist so that the resist has a second width, the second width being smaller than the first width;
- and
- adding the element into the semiconductor layer at a second concentration rate with the wiring and the resist thereover having the second width as a second mask, the second concentration rate being smaller than the first concentration rate.
A method for manufacturing an active matrix display device, comprising steps of:
- forming a semiconductor layer over a glass substrate;
- forming a first insulating film over the semiconductor layer;
- forming a conductive layer on and in contact with the first insulating film;
- etching the conductive layer so as to form a wiring, the wiring having a first width;
- adding an element selected from an n-type impurity element and a p-type impurity element into the semiconductor layer at a first concentration rate with the wiring as a first mask;
- etching the wiring so that the wiring has a second width, the second width being smaller than the first width;
- and
- adding the element into the semiconductor layer at a second concentration rate with the wiring having the second width as a second mask, the second concentration rate being smaller than the first concentration rate.
A method for manufacturing an active matrix display device, comprising steps of:
- forming a semiconductor layer over a glass substrate;
- forming a first insulating film over the semiconductor layer;
- forming a resist over the first insulating film, the resist having a first width;
- adding an element selected from an n-type impurity element and a p-type impurity element into the semiconductor layer at a first concentration rate with the resist as a first mask;
- etching a conductive layer so as to form a wiring, the wiring having a second width and the second width being smaller than the first width;
- and
- adding the element into the semiconductor layer at a second concentration rate with the wiring as a second mask, the second concentration rate being smaller than the first concentration rate.
Dependencies are inferred from the claim text.