Trench forming method, metal wiring forming method, and method of manufacturing thin film transistor array panel

A method of forming a thin film transistor array panel, the method comprising:

• providing a first insulating layer on a substrate;
• providing an amorphous carbon layer on the first insulating layer;
• providing a second insulating layer on the amorphous carbon layer;
• patterning the second insulating layer and the amorphous carbon layer, to form an opening in the amorphous carbon layer;
• etching the first insulating layer by using the amorphous carbon layer comprising the opening as a mask, to form a trench in the first insulating layer;
• removing the amorphous carbon layer;
• providing a metal layer on the substrate;
• and
• polishing the metal layer through a chemical mechanical polishing process, to form a metal wiring in the trench.

A method of manufacturing a thin film transistor array panel, the method comprising:

• providing a first insulating layer on a substrate;
• providing an amorphous carbon layer on the first insulating layer;
• providing a second insulating layer on the amorphous carbon layer;
• patterning the second insulating layer and the amorphous carbon layer to form an opening in the amorphous carbon layer;
• etching the first insulating layer by using the amorphous carbon layer comprising the opening as a mask, to form a trench in the first insulating layer;
• removing the amorphous carbon layer;
• providing a metal layer on the substrate;
• polishing the metal layer through a chemical mechanical polishing process, to form a gate electrode in the trench;
• providing a gate insulating film on the gate electrode;
• providing a semiconductor layer on the gate insulating film;
• providing a source electrode and a drain electrode on the semiconductor layer, the source electrode and the drain electrode spaced apart from each other;
• providing a passivation film on the source electrode and the drain electrode;
• providing a contact hole in the passivation film, the contact hole exposing a portion of the drain electrode;
• and
• providing a pixel electrode on the passivation film, the pixel electrode connected to the drain electrode through the contact hole.