Method for making correction map of dose amount, exposure method, and method for manufacturing semiconductor device

An exposure method including correcting a dose amount and irradiating EUV light based on a correction map of the dose amount,

• the correction map being made by:
• estimating an exposure result based on an initial correction map of the dose amount and flare of the EUV light;
• determining a goodness of the exposure result;
• and
• correcting the initial correction map in the case where the exposure result is unacceptable,
• repeating the correcting of the initial correction map, the estimating of the exposure result, and the determining of the goodness until the exposure result is good.

A method for manufacturing a semiconductor device, comprising:

• forming a resist film above a semiconductor substrate;
• exposing the resist film;
• forming a resist pattern by developing the resist film;
• and
• performing processing of the semiconductor substrate using the resist pattern as a mask,
• the exposing of the resist film being performed by irradiating EUV light and correcting a dose amount based on a correction map of the dose amount,
• the correction map being made by:
• estimating an exposure result based on an initial correction map of the dose amount and flare of the EUV light;
• determining a goodness of the exposure result;
• and
• correcting the initial correction map in the case where the exposure result is unacceptable,
• repeating the correcting of the initial correction map, the estimating of the exposure result, and the determining of the goodness until the exposure result is good.