Substrate and secondary battery
AssigneesToshiba Materials Co., Ltd., Kabushiki Kaisha Toshiba
InventorsAkito SASAKI, Miho NAKAMURA, Tomomichi NAKA, Yoko TOKUNO, Hideyuki OOZU
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Abstract
According to one embodiment, a substrate includes a semiconductor layer. The semiconductor layer comprises tungsten oxide particles having a first peak in a range of 268 to 274 cm−1, a second peak in a range of 630 to 720 cm−1, and a third peak in a range of 800 to 810 cm−1 in Raman spectroscopic analysis. The semiconductor layer has a thickness of 1 μm or more. The semiconductor layer has a porosity of 20 to 80 vol %.
Claims14
A substrate comprising a semiconductor layer which comprises tungsten oxide particles having a first peak in a range of 268 to 274 cm−1, a second peak in a range of 630 to 720 cm−1, and a third peak in a range of 800 to 810 cm−1 in Raman spectroscopic analysis and has a thickness of 1 μm or more and a porosity of 20 to 80 vol %.
Dependencies are inferred from the claim text.