Gas barrier film, method of producing a gas barrier film, and electronic device

A method of producing a gas barrier film in which a base;

• a first barrier layer containing silicon which is formed on at least one surface of the base by a plasma chemical vapor deposition method using at least an inorganic silicon compound as a raw material;
• and a second barrier layer containing silicon oxynitride, which is formed on the first barrier layer by applying an inorganic compound-containing liquid and subsequently being subjected to a modification treatment, are laminated in this order,
• wherein a ratio of a water vapor transmission rate R1 to a water vapor transmission rate R2 (R1/R2) is 80 or more and 5000 or less, where a water vapor transmission rate (g/m2/day) at 40° C. and 90% RH in a structure in which the first barrier layer is formed on the base is represented as the R1, and a water vapor transmission rate (g/m2/day) at 40° C. and 90% RH in a structure in which the first barrier layer and the second barrier layer are laminated on the base is represented as the R2.