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US 2013/0241084 A1Published application
Semiconductor device
AssigneeToyota Jidosha Kabushiki Kaisha
InventorHiroaki Tanaka
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Abstract
A semiconductor device disclosed in this description has a semiconductor substrate including an element region in which a semiconductor element is formed, and an upper surface electrode formed on an upper surface of the element region of the semiconductor substrate. The upper surface electrode has a first thickness region and a second thickness region which is thicker than the first thickness region, and a bonding wire is bonded on the second thickness region.
Claims3
A semiconductor device comprising:
- a semiconductor substrate including an element region in which a semiconductor element is formed, and
- an upper surface electrode formed on an upper surface of the element region of the semiconductor substrate, wherein
- the upper surface electrode comprises a first thickness region and a second thickness region which is thicker than the first thickness region, and
- a bonding wire is bonded on the second thickness region, and
- a slit portion is provided at a boundary between the first thickness region and the second thickness region in the upper surface electrode.
2 more elements
Dependencies are inferred from the claim text.