Contact bars for modifying stress in semiconductor device and related method

A method comprising:

• forming an n-type field effect transistor (NFET) having source/drain regions;
• forming a p-type field effect transistor (PFET) having source/drain regions;
• forming a stress inducing layer over both the NFET and the PFET, the stress inducing layer inducing only one of a compressive stress and a tensile stress;
• and
• modifying a stress induced in a selected device of the PFET and the NFET compared to a stress induced in the other device by:
• forming a contact bar extending through the stress inducing layer and coupled to at least one of the source/drain regions of the selected device, and
• forming a round contact extending through the stress inducing layer and coupled to at least one of the source/drain regions of the other device.

A semiconductor device comprising:

• an n-type field effect transistor (NFET) having source/drain regions;
• a p-type field effect transistor (PFET) having source/drain regions;
• a stress inducing layer over both the NFET and the PFET, the stress inducing layer inducing only one of a compressive stress and a tensile stress;
• and
• wherein in the case that the stress inducing layer includes the compressive stress, the semiconductor device further includes a contact bar extending through the stress inducing layer and coupled to at least one of the source/drain regions of the NFET, and a round contact to each of the source/drain regions of the PFET, and
• wherein in the case that the stress inducing layer includes the tensile stress, the semiconductor device further includes a contact bar extending through the stress inducing layer and coupled to at least one of the source/drain regions of the PFET, and a round contact to each of the source/drain regions of the NFET.