Semiconductor device and manufacturing method thereof
AssigneeRenesas Electronics Corporation
InventorsTatsunori Kaneoka, Takaaki Kawahara
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Abstract
A semiconductor device with a nonvolatile memory is provided which has improved electric performance. A memory gate electrode is formed over a semiconductor substrate via an insulating film. The insulating film is an insulating film having a charge storage portion therein, and includes a first silicon oxide film, a silicon nitride film over the first silicon oxide film, and a second silicon oxide film over the silicon nitride film. Metal elements exist between the silicon nitride film and the second silicon oxide film, or in the silicon nitride film at a surface density of 1×1013 to 2×1014 atoms/cm2.
Claims17
A semiconductor device, comprising:
- a semiconductor substrate;
- a first gate electrode formed over the semiconductor substrate;
- and
- a first insulating film formed between the first gate electrode and the semiconductor substrate, said first insulating film including therein a charge storage portion,
- wherein the first insulating film includes a first silicon oxide film, a silicon nitride film over the first silicon oxide film, and a second silicon oxide film over the silicon nitride film, and
- wherein metal elements exist between the silicon nitride film and the second oxide film, or in the silicon nitride film, at a surface density of 1×1013 to 2×1014 atoms/cm2.
A manufacturing method of a semiconductor device, said semiconductor device including:
- a semiconductor substrate;
- first and second gate electrodes formed adjacent to each other over the semiconductor substrate;
- a first gate insulating film formed between the semiconductor substrate and the first gate electrode and having a charge storage portion therein;
- and a second gate insulating film formed between the semiconductor substrate and the second gate electrode,
- said manufacturing method comprising the steps of:
- (a) providing a semiconductor substrate;
- (b) forming a second insulating film for the second gate insulating film over a main surface of the semiconductor substrate;
- (c) forming a second conductive film for the second gate electrode over the second insulating film;
- (d) forming the second gate electrode by patterning the second conductive film;
- (e) forming a first insulating film for the first gate insulating film over the main surface of the semiconductor substrate and a surface of the second gate electrode, said first insulating film including the charge storage portion therein;
- (f) forming a first conductive film for the first gate electrode over the first insulating film;
- and
- (g) forming the first gate electrode by leaving the first conductive film via the first insulating film over a sidewall of the second gate electrode by etching back the first conductive film,
- wherein the first insulating film includes a first silicon oxide film, a silicon nitride film over the first silicon oxide film, and a second silicon oxide film over the silicon nitride film, and
- wherein metal elements exist between the silicon nitride film and the second silicon oxide film, or in the silicon nitride film, at a surface density of 1×1013 to 2×1014 atoms/cm2.
Dependencies are inferred from the claim text.