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US 2013/0240972 A1Published application
Semiconductor device and method of fabricating the same
AssigneeKabushiki Kaisha Toshiba
InventorsKenichiro TORATANI, Masayuki Tanaka
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Abstract
An aspect of the present embodiment, there is provided a semiconductor device, including a semiconductor substrate, a first insulator above the semiconductor substrate, the first insulator containing tungsten, germanium and silicon, a charge storage film on the first insulator, a second insulator on the charge storage film and, a control gate electrode on the second insulator.
Claims20
A semiconductor device, comprising:
- a semiconductor substrate;
- a first insulator above the semiconductor substrate, the first insulator containing tungsten, germanium and silicon;
- a charge storage film on the first insulator;
- a second insulator on the charge storage film and
- a control gate electrode on the second insulator.
2 more elements
A method of fabricating a semiconductor device, comprising:
- providing a tungsten-contained insulator and a germanium-contained insulator above a semiconductor substrate;
- providing a silicon-contained insulator on the tungsten-contained insulator or the germanium-contained insulator.
Dependencies are inferred from the claim text.