Semiconductor device and method for fabricating semiconductor device
AssigneeKabushiki Kaisha Toshiba
InventorsOsamu ARISUMI, Toshihiko Iinuma
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Abstract
A semiconductor device according to an embodiment, includes a plurality of gate structures; a first dielectric film; and a second dielectric film. The first dielectric film crosslinks adjacent gate structures of the plurality of gate structures so as to form a cavity each above and below in a position between the adjacent gate structures. The second dielectric film is formed as if to cover the cavity above the first dielectric film between the adjacent gate structures.
Claims20
A semiconductor device, comprising:
- a plurality of gate structures;
- a first dielectric film that crosslinks adjacent gate structures of the plurality of gate structures so as to form a cavity each above and below in a position between the adjacent gate structures;
- and
- a second dielectric film formed as if to cover the cavity above the first dielectric film between the adjacent gate structures.
A method for fabricating a semiconductor device, comprising:
- forming a sacrificial film up to an intermediate height position between a plurality of gate structures formed above a semiconductor substrate;
- forming a first dielectric film above the sacrificial film;
- forming a second dielectric film above the plurality of gate structures so as to leave a cavity between the plurality of gate structures above the first dielectric film;
- and
- removing the sacrificial film after the first dielectric film is formed.
A method for fabricating a semiconductor device, comprising:
- forming a sacrificial film up to an intermediate height position between a plurality of gate structures formed above a semiconductor substrate;
- forming a first dielectric film above the sacrificial film;
- removing the sacrificial film after the first dielectric film is formed;
- etching the first dielectric film up to an another intermediate height position between the plurality of gate structures after the sacrificial film is removed;
- and
- forming a second dielectric film above the plurality of gate structures so as to leave a cavity between the plurality of gate structures and above the first dielectric film after the first dielectric film is etched.
Dependencies are inferred from the claim text.