Magnetic storage apparatus

A magnetic storage apparatus comprising:

• a selective transistor formed on a semiconductor substrate, and including a gate electrode, a source area and a drain area;
• an interlayer insulating film formed on the semiconductor substrate to cover the selective transistor;
• a contact formed through the interlayer insulating film and connected to the drain area;
• and
• a magnetic resistance effect element formed on the interlayer insulating film and connected to the contact, the magnetic resistance effect element including a ferromagnetic storage layer and ferromagnetic reference layer, the ferromagnetic storage layer having a direction of magnetization thereof varied by a spin polarized current, the ferromagnetic reference layer having a constant direction of magnetization, the magnetic resistance effect element having a resistance varied in accordance with a magnetization state of the ferromagnetic storage layer,
• the gate electrode at least having a portion formed of a ferromagnetic layer magnetized in a direction opposite to the direction of magnetization of the ferromagnetic reference layer.