Plasma protection diode for a hemt device

A semiconductor device, comprising:

• a silicon substrate;
• a first III-V compound layer being disposed over the silicon substrate;
• a second III-V compound layer being disposed over the first III-V compound layer;
• a transistor being disposed over the first III-V compound layer and partially in the second III-V compound layer;
• a diode being disposed in the silicon substrate;
• and
• a via being coupled to the diode and extending through at least the first III-V compound layer, wherein the via is electrically coupled to the transistor or disposed adjacent to the transistor.

A method of fabricating a semiconductor device, comprising:

• providing a silicon substrate having a III-V compound layer disposed thereon;
• forming a diode in the silicon substrate through an ion implantation process, the diode being formed proximate to an interface between the silicon substrate and the III-V compound layer;
• etching an opening through the III-V compound layer to expose the diode;
• filling the opening with a conductive material, thereby forming a via that is coupled to the diode;
• and
• forming a High Electron Mobility Transistor (HEMT) device at least partially in the III-V compound layer.