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US 2013/0240949 A1Published application
Compound semiconductor device and method for manufacturing the same
AssigneeFujitsu Limited
InventorAtsushi YAMADA
Life of this patent
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Abstract
An AlGaN/GaN HEMT includes a compound semiconductor laminated structure, a gate electrode formed above the compound semiconductor laminated structure, and a p-type semiconductor layer formed between the compound semiconductor laminated structure and the gate electrode, and the p-type semiconductor layer has tensile strain in a direction parallel to a surface of the compound semiconductor laminated structure.
Claims11
A compound semiconductor device, comprising:
- a compound semiconductor laminated structure;
- an electrode formed above the compound semiconductor laminated structure;
- and
- a p-type semiconductor layer formed between the compound semiconductor laminated structure and the electrode,
- wherein the p-type semiconductor layer has tensile strain in a direction parallel to a surface of the compound semiconductor laminated structure.
2 more elements
A method for manufacturing a compound semiconductor device, the method comprising:
- forming a compound semiconductor laminated structure;
- and
- forming a p-type semiconductor layer in an electrode forming region above the compound semiconductor laminated structure,
- wherein the p-type semiconductor layer has tensile strain in a direction parallel to a surface of the compound semiconductor laminated structure.
1 more element
A power supply unit, comprising:
- a transformer;
- and
- a high-voltage circuit and a low-voltage circuit, between which the transformer is sandwiched, the high-voltage circuit including
- a transistor, the transistor including:
- a compound semiconductor laminated structure;
- an electrode formed above the compound semiconductor laminated structure;
- and
- a p-type semiconductor layer formed between the compound semiconductor laminated structure and the electrode,
- wherein the p-type semiconductor layer has tensile strain in a direction parallel to a surface of the compound semiconductor laminated structure.
6 more elements
Dependencies are inferred from the claim text.