Photoelectric conversion device

Abstract

The present invention aims to improve the conversion efficiency in a photoelectric conversion device. A photoelectric conversion device comprises an electrode, a first semiconductor layer containing a Group I-III-VI compound semiconductor and located on the electrode, and a second semiconductor layer having a conductivity type different from that of the first semiconductor layer and located on the first semiconductor layer, wherein, in the first semiconductor layer, a ratio CVI/CI of the content CVI of a Group VI-B element to the content CI of a Group I-B element in a surface part of the second semiconductor layer side thereof is larger than the ratio CVI/CI in a rest part of the electrode side thereof.

Dependencies are inferred from the claim text.