Group iii nitride semiconductor light-emitting element and method for producing the same

A group III nitride semiconductor light-emitting device comprising a conductive support;

• a p-electrode comprising Ag or an alloy containing Ag, positioned on the support;
• a p-type layer, a light-emitting layer and an n-type layer comprising a group III nitride semiconductor, sequentially positioned on the p-electrode;
• and an n-electrode positioned on the n-type layer,
• wherein a region that is a surface at the support side of the p-electrode and overlaps the n-electrode in a planar view has a solidified metal paste that is a solid of a metal paste, and
• a region overlapping the solidified metal paste in a planar view, of the p-type layer is a high resistance region.

A group III nitride semiconductor light-emitting device comprising a transparent conductive substrate;

• an n-type layer, a light-emitting layer and a p-type layer comprising a group III nitride semiconductor, sequentially positioned on the transparent conductive substrate;
• a p-electrode comprising Ag or an alloy containing Ag, positioned on the p-type layer;
• and an n-electrode positioned on a surface at a side opposite the n-type layer side of the transparent conductive substrate,
• wherein a region on the p-electrode and overlapping the n-electrode in a planar view has a solidified metal paste that is a solid of the metal paste, and
• a region overlapping the solidified metal paste in a planar view, of the p-type layer is a high resistance region.

A face-up-type group III nitride semiconductor light-emitting element comprising a growth substrate;

• an n-type layer, a light-emitting layer and a p-type layer comprising a group III nitride semiconductor, sequentially positioned on the growth substrate;
• a semiconductor layer in which a part of the semiconductor layer is etched from the p-type layer side and a surface of the n-type layer is exposed;
• an n-electrode positioned on the exposed n-type layer;
• a transparent electrode positioned on the n-type layer;
• and a p-pad electrode positioned on the transparent electrode,
• wherein the p-pad electrode is a solidified metal paste, and
• a region overlapping the p-pad electrode in a planar view, of the p-type layer is a high resistance region.