Semiconductor light-emitting diode chip, light-emitting device, and manufacturing method thereof

A semiconductor light emitting device comprising a semiconductor light emitting diode (LED) chip and a support supporting the semiconductor LED chip,

• wherein the semiconductor LED chip comprises:
• a semiconductor light emitting diode unit including a light-transmissive substrate, and a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer sequentially formed on an upper surface of the light-transmissive substrate;
• a rear reflective laminate including an auxiliary optical layer formed on a lower surface of the light-transmissive substrate and made of a material having a predetermined refractive index and a metal reflective film formed on a lower surface of the auxiliary optical layer;
• and
• a bonding laminate provided on a lower surface of the rear reflective laminate and including a bonding metal layer having an interface fusion-bonded to the support and made of a eutectic metal material and an anti-diffusion film formed to prevent diffusion of elements between the bonding metal layer and the metal reflective film.

A method for manufacturing a semiconductor light emitting diode (LED) chip, the method comprising:

• preparing a light-transmissive wafer and a semiconductor laminate including a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer sequentially formed on an upper surface of the light-transmissive wafer;
• providing a support substrate on the semiconductor laminate;
• polishing a lower surface of the light-transmissive wafer to reduce a thickness of the light-transmissive wafer;
• irradiating a laser beam to form cracks allowing the light-transmissive wafer and the semiconductor laminate to be separated into device units;
• forming a metal reflective film on a lower surface of the light-transmissive wafer after the irradiating a laser beam;
• and
• separating the light-transmissive wafer and the semiconductor laminate by using the cracks.