Semiconductor light-emitting device and manufacturing method thereof

Abstract

A semiconductor light-emitting device and a manufacturing method thereof are provided, wherein the semiconductor light-emitting device includes a substrate, a first type doped semiconductor layer, a light-emitting layer, a second type doped semiconductor layer and an optical micro-structure layer. The first type doped semiconductor layer is disposed on the substrate and includes a base portion and a mesa portion. The base portion has a top surface, and the mesa portion is disposed on the top surface of the base portion. The light-emitting layer is disposed on the first type doped semiconductor layer. The second type doped semiconductor layer is disposed on the light-emitting layer. The optical micro-structure layer is embedded in the first type doped semiconductor layer.

Dependencies are inferred from the claim text.